Luminescence and conduction charge in thin-film electroluminescent devices

The luminescence and conduction currents of a doubly-insulated thin-film electroluminescent device were studied under various excitation conditions. The conduction current waveform was calculated numerically from the luminescence waveform. It was composed of two components: a fast transient component j_fc, which rises and decays rapidly when a pulse is applied, and a dc-like component j_dc, which maintains a constant level during the duration of pulse. The ratio of these components varied considerably with applied voltage. Both the slow response of luminescence to voltage change and the change in j_fc when the excitation conditions were changed from repetitive pulses to a single pulse suggest an accumulation of charges inside the electroluminescence layer. This accumulation causes a space charge effect which explains the dominance of j_fc in the high-brightness region. The fact that luminescence intensity in this region is not related to the amplitude of individual pulses, but rather to the average amplitude of the pulse train also indicates that the space-charge-induced internal electric field is the main factor in accelerating the carriers which excite the luminescence centers. It was found that the two conduction current components showed similar characteristics in singly-insulated devices.     

Almost unique determination of neutral-current couplings in neutrino-hadron interactions

Simultaneous analyses of inclusive and semi-inclusive reactionns in neutrino-nucleon collisions and elastic neutrino-proton scattering uniquely determine the neutral-current couplings between neutrinos and hadrons up to a two-fold “vector-axial-vector ambiguity”. One of the preferred solutions coincides with the Salam-Weinberg model within errors while the other solution, also compatible with SU(2) ? U(1) models with the simplest Higgs mechanism, may be helpful in understanding the bismuth puzzle.     

A study of surface reproducibility and impurity segregation using ion neutralization and photoemission spectroscopies

We have studied the reproducibility of electron spectra obtained from a series of Si(111) surfaces on lightly doped crystals that were subjected to a common sputtering procedure but different subsequent heat treatments. Each of the surfaces displayed a sharp 7 × 7 LEED pattern and showed no impurities above the minimum detection limit of our Auger electron spectrograph. Ion neutralization spectroscopy (INS) and photoemission (UPS) at ?ω = 16.8 and 21.2 eV were used to obtain the electron spectra. From the observed differences in the electron spectra, the known characteristics of these spectroscopies, and a comparison with theory we conclude that these surfaces had small and differing amounts of impurity located principally in the selvedge or near-surface bulk rather than directly on or in the surface monolayer. The surface was cleaner than the near surface bulk. Longer heating of one sample to higher temperatures brought to the surface detectable amounts of Mo impurity that had diffused into the crystal from the Mo mounting clamps, changing the LEED pattern to √3 × √3(R 30°) and producing large modifications of both the INS and UPS spectra.     

The effect of disordering on the spectral properties of partial monolayers of H on Si(111)

Ultraviolet photoemission measurements are reported for a H covered Si(111) surface for which the H coverage ranged from a fraction to a full monolayer. These measurements reveal striking differences depending whether the Si(111) substrate is kept at room temperature (RT) or 150°C. In particular, the 150°C sample UPS spectral series shows monotonic growth with little line shape change while the RT series shows significant line shape modification with coverage. These results are interpreted as island growth at 150°C and disordered adsorption at RT. Theoretical model calculations are carried out of the electron density of states of a fractional monolayer of H chemisorbed to Si(111) that reproduce the essential features of the RT data and confirm the role of disordering there.     

Parallel vs. anti-parallel orientation in a curdlan/oligo(dA) complex as estimated by a FRET technique

We already found that beta-1,3-glucan polysaccharides form polymeric complexes with certain polynucleotides, but the parallel vs. anti-parallel orientation in those complexes had remained unsolved. In this paper, this controversial problem has been discussed for curdlan/oligo(dA) complexes utilizing two different energy transfer techniques. The first system consists of a combination of fluorescein-labeled curdlan and 3'-(or 5'-)tetramethyl-rhodamine (TAMRA)-labeled oligo(dA). The second system utilizes gold nanoparticles: that is, two curdlan chains were linked by a disulfide bond and after complexation with oligo(dA), the complex was immobilized on gold nanoparticles. In this system, TAMRA was attached to the 3'(or 5') end of oligo(dA) and the gold particle acted as a fluorescence quencher (energy acceptor). These experiments have led us to conclude that in the curdlan/oligo(dA) complex, parallel orientation is more favourable than anti-parallel orientation. These findings have enabled us to envision a clearer image for the complexation mode between beta-1,3-glucan polysaccharides and polynucleotides.     

Hydrogen-induced instability of the Ge(105) surface

The structure and stability of the hydrogen-terminated (105) surface of Ge deposited on Si(105) substrates are investigated by scanning tunneling microscopy (STM). Investigations combining STM, electron energy loss spectroscopy, and theory reveal that Si incorporation into the surface Ge layer of hydrogen-terminated Ge/Si(105) drastically destabilizes the surface. The STM images obtained on this surface are well explained by the recently established rebonded-step structure model.     

Role of surface electronic structure in thin film molecular ordering

We show that the orientation of pentacene molecules is controlled by the electronic structure of the surface on which they are deposited. We suggest that the near-Fermi level density of states above the surface controls the interaction of the substrate with the pentacene pi orbitals. A reduction of this density as compared to noble metals, realized in semimetallic Bi(001) and Si(111)(5 x 2)Au surfaces, results in pentacene standing up. Interestingly, pentacene grown on Bi(001) is highly ordered, yielding the first vertically oriented epitaxial pentacene thin films observed to date.     

Optical selection rules in light emission from the scanning tunneling microscope

It is reported that optical selection rules still apply in light emission from the scanning tunneling microscope (STM). Linear polarization of isochromat light emitted from the tunneling gap between a STM tip made of tungsten (W) and a silicon (Si) sample with a (001) clean surface strongly depends on the bias voltage between tip and sample. The results show that pi* and sigma* surface states, for example, of the Si(001) sample contribute to emission of p- and s-polarized light, respectively, in accordance with optical selection rules.     

Selective and efficient transformation of N-(4-substituted benzoyl)-α-dehydroarylalanine alkyl esters into 4,5-dihydrooxazole derivatives via photoinduced electron transfer

The irradiation of N-(4-substituted benzoyl)-α-dehydroarylalanine alkyl esters (1) in methanol containing triethylamine (TEA) was found to quantitatively give cis- and trans-4,5-dihydrooxazole derivatives (2), which were described as being formed via electron transfer from TEA to the excited-state (E)-1 followed by kinetically-controlled cyclization of the (E)-1-derived anion radical. A product composition analysis showed that the cis-2/trans-2 composition ratio is greatly varied depending on the stereoelectronic properties of the substituents, the polarity of protic solvents and the concentration of TEA.